CRG40T60AN3H TO-3P 80A 600V IGBT Transistör
224,66 TL
Type Designator: CRG40T60AN3H
Type: IGBT + Anti-Parallel Diode
Marking Code: G40T60AN3H
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 47.2 nS
Coesⓘ - Output Capacitance, typ: 141 pF
Qg ⓘ - Total Gate Charge, typ: 239 nC
Package: TO3PN
Type: IGBT + Anti-Parallel Diode
Marking Code: G40T60AN3H
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 47.2 nS
Coesⓘ - Output Capacitance, typ: 141 pF
Qg ⓘ - Total Gate Charge, typ: 239 nC
Package: TO3PN