CRG60T60AN3H-(BT60T60ANFK) TO-3P 600V 120A IGBT Transistör
287,39 TL
Type Designator: CRG60T60AN3H
Type: IGBT + Anti-Parallel Diode
Marking Code: G60T60AN3H
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Qg ⓘ - Total Gate Charge, typ: 117 nC
Package: TO3PN
Type: IGBT + Anti-Parallel Diode
Marking Code: G60T60AN3H
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Qg ⓘ - Total Gate Charge, typ: 117 nC
Package: TO3PN