SGP30N60HS TO-220 30A 600V IGBT Transistör
114,47 TL
Type Designator: SGP30N60HS
Type: IGBT
Marking Code: G30N60HS
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 41 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qg ⓘ - Total Gate Charge, typ: 141 nC
Package: TO220
Type: IGBT
Marking Code: G30N60HS
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 41 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qg ⓘ - Total Gate Charge, typ: 141 nC
Package: TO220